DocumentCode :
3723404
Title :
CAUSE: Critical application usage-aware memory system using non-volatile memory for mobile devices
Author :
Yeseong Kim;Mohsen Imani;Shruti Patil;Tajana S. Rosing
Author_Institution :
Computer Science and Engineering, University of California, San Diego, USA
fYear :
2015
Firstpage :
690
Lastpage :
696
Abstract :
Mobile devices are severely limited in memory, which affects critical user-experience metrics such as application service time. Emerging non-volatile memory (NVM) technologies such as STT-RAM and PCM are ideal candidates to provide higher memory capacity with negligible energy overhead. However, existing memory management systems overlook mobile users application usage which provides crucial cues for improving user experience. In this paper, we propose CAUSE, a novel memory system based on DRAM-NVM hybrid memory architecture. CAUSE takes explicit account of the application usage patterns to distinguish data criticality and identify suitable swap candidates. We also devise NVM hardware design optimized for the access characteristics of the swapped pages. We evaluate CAUSE on a real Android smartphone and NVSim simulator using user application usage logs. Our experimental results show that the proposed technique achieves 32% faster launch time for mobile applications while reducing energy cost by 90% and 44% on average over non-optimized STT-RAM and PCM, respectively.
Keywords :
"Nonvolatile memory","Random access memory","Memory management","Mobile handsets","Phase change materials","Hardware","Mobile applications"
Publisher :
ieee
Conference_Titel :
Computer-Aided Design (ICCAD), 2015 IEEE/ACM International Conference on
Type :
conf
DOI :
10.1109/ICCAD.2015.7372637
Filename :
7372637
Link To Document :
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