DocumentCode :
3723481
Title :
Novel reliability evaluation method for NAND flash memory
Author :
Jiang Xiao-bo; Tan Xue-qing; Huang Wei-pei
Author_Institution :
School of Electronic and Information, South China University of Technology, Guangzhou, China
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
The evaluation of error correction code (ECC) for NAND flash memory is increasingly complicated by the increasing bit error rate in memory. The concept of error-free information capacity is proposed to evaluate the performance ECC of NAND flash memory. The new method simultaneously considers the capacity and reliability of NAND flash memory. Low-density parity-check (LDPC) codes with a medium code rate can improve the integrated performance of NAND flash memory in order of magnitudes. Observations provide guides for the development of ECC schemes in NAND flash memory in future.
Keywords :
"Flash memories","Error correction codes","Channel models","Reliability","Bit error rate","Parity check codes","Encoding"
Publisher :
ieee
Conference_Titel :
TENCON 2015 - 2015 IEEE Region 10 Conference
ISSN :
2159-3442
Print_ISBN :
978-1-4799-8639-2
Electronic_ISBN :
2159-3450
Type :
conf
DOI :
10.1109/TENCON.2015.7372718
Filename :
7372718
Link To Document :
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