DocumentCode :
3723612
Title :
An analysis of the read margin and power consumption of crossbar ReRAM arrays
Author :
Sujin Choi; Wookyung Sun; Hyein Lim; Hyungsoon Shin
Author_Institution :
Department of Electronics Engineering, Ewha Womans University, Seoul, Korea
fYear :
2015
Firstpage :
1
Lastpage :
3
Abstract :
The read margin and power consumption for various selector characteristics and bias schemes are analyzed during read operation. The 1/2 and 1/3 bias schemes exhibit different read operation properties. There is a trade-off between the read margin and power consumption that depends on the bias scheme and characteristics of the selector. The read margin of the 1/2 bias scheme is decreased at low on/off ratios because of the output voltage drop across the LRS cell. This drop is due to a rapid increase in the leakage current when a selector with low on/off ratio is used in the 1/2 bias scheme. Therefore, the bias scheme and selector should be selected appropriately according to the purpose of the application.
Keywords :
"Power demand","Computer architecture","Microprocessors","Leakage currents","Resistance","Random access memory","Voltage measurement"
Publisher :
ieee
Conference_Titel :
TENCON 2015 - 2015 IEEE Region 10 Conference
ISSN :
2159-3442
Print_ISBN :
978-1-4799-8639-2
Electronic_ISBN :
2159-3450
Type :
conf
DOI :
10.1109/TENCON.2015.7372853
Filename :
7372853
Link To Document :
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