Design and optimization of high efficiency GaN HEMT class-E power amplifiers

This paper describes a method for the design and optimization of high-efficiency microwave power amplifiers with a GaN HEMT transistor. The method is based on the fundamentals of class-E switching mode power amplifiers. For time and frequency analysis, a large-signal model of the transistor was adapted and developed with nonlinear output capacitance for the requirements of microwave range. As a result of the presented design algorithm and manufacture of the amplifier, a power added efficiency (PAE) of 75% at Pout = 7W (CW) was achieved. Moreover, PAE ≥ 70% at 10% bandwidth.