Title :
Comparative simulation study on MoS2 FET and FinFET
Author :
Ming Zhang; Po-Yen Chien;Jason C.S. Woo
Author_Institution :
Department of Electrical Engineering, University of California, Los Angeles, United States
Abstract :
Both MoS2 FET and FinFET are simulated and compared to experimental results and the impact of gate scaling-down on the transistor performance is studied. Though MoS2 FET shows better suppression of the short channel effect, its on-current is still lower than the one of FinFET down to 10nm physical channel length due to the low saturation velocity of MoS2. In addition, the improvement of mobility over 60cm2/Vs has little benefit for the on-current.
Keywords :
"FinFETs","Performance evaluation"
Conference_Titel :
TENCON 2015 - 2015 IEEE Region 10 Conference
Print_ISBN :
978-1-4799-8639-2
Electronic_ISBN :
2159-3450
DOI :
10.1109/TENCON.2015.7373014
