A novel separate gate InAlAs/InGaAs/InAlAs DG-HEMT heterogeneous mixer

This paper presents an analytical model of a heterogeneous mixer using a InAlAs/InGaAs/InAlAs separate gate double heterostructure double gate HEMT (DG-HEMT). The local oscillator (LO) and radio frequency (RF) signals are applied at the same gate (gate 1) and a dc voltage is applied at the other gate (gate 2). The effects of dc gate bias are studied on mixer performance establishing a better control. The LO and RF frequencies chosen are 0.9 GHz and 1 GHz respectively, resulting in the desired down and up converted intermediate frequencies. The output frequency spectrum obtained for DG-HEMT based mixer using the analytical model is compared with the available DG-MOSFET mixer results.