Title :
“Mixed-mode” stress dependence reliability degradation in SiGe:C HBTs fabricated on thin-film SOI
Author :
Y. Yang;J.X. Luo;J. Chen;K. Lu;Z. Chai;X.M. Wu;X. Wang
Author_Institution :
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050, China
Abstract :
The physical mechanism of the time, emitter lateral dimension (AE) and low-high temperature dependent degradation under mixed-mode stress for C-doped SiGe HBTs (SiGe:C HBTs) on thin-film silicon-on-insulator (SOI) is investigated. We focus on the impact of mixed-mode stress on device characteristics such as base current (IB) and current gain (β) degradation rate, device scaling issue and low-high temperature.
Keywords :
"Stress","Degradation","Temperature","Reliability","Heterojunction bipolar transistors","Temperature measurement","Temperature dependence"
Conference_Titel :
Microwave Symposium (MMS), 2015 IEEE 15th Mediterranean
DOI :
10.1109/MMS.2015.7375379
