• DocumentCode
    3725459
  • Title

    “Mixed-mode” stress dependence reliability degradation in SiGe:C HBTs fabricated on thin-film SOI

  • Author

    Y. Yang;J.X. Luo;J. Chen;K. Lu;Z. Chai;X.M. Wu;X. Wang

  • Author_Institution
    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050, China
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The physical mechanism of the time, emitter lateral dimension (AE) and low-high temperature dependent degradation under mixed-mode stress for C-doped SiGe HBTs (SiGe:C HBTs) on thin-film silicon-on-insulator (SOI) is investigated. We focus on the impact of mixed-mode stress on device characteristics such as base current (IB) and current gain (β) degradation rate, device scaling issue and low-high temperature.
  • Keywords
    "Stress","Degradation","Temperature","Reliability","Heterojunction bipolar transistors","Temperature measurement","Temperature dependence"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium (MMS), 2015 IEEE 15th Mediterranean
  • Type

    conf

  • DOI
    10.1109/MMS.2015.7375379
  • Filename
    7375379
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3725459