Simulation of electron mobility in semi-metal HgCdTe quantum wells: Composition dependencies

In this work there are numerically modeled electron mobilities in intrinsic and n-type semi-metal HgCdTe quantum wells at T = 77 K. We accounted such scattering mechanisms as longitudinal polar optical phonon scattering, electron-charged impurity scattering and electron-hole scattering. Inelasticity of electron-phonon scattering was accounted by direct iterative solution of Boltzmann transport equation. Also we accounted 2DEG screening for all mentioned scattering mechanisms. Comparison with liquid helium experimental data is provided.