Low frequency noise of MOSFETs in partially depleted SOI technology with multi-fingers

Tunnel diode body contact (TDBC) MOSFETs is used to suppress floating body effects (FBE) and achieve significant improvement in RF performance. For the first time, low frequency noise (LF noise) of TDBC MOSFETs, also called 1/f noise, is reported in this paper. LF noise performance of floating body (FB), T-gate body contact (TB) and TDBC MOSFET fabricated in 0.13 μm Smart-Cut partially depleted (PD) SOI technology is compared. Excess Lorentzian noise caused by ionization impact under high drain voltage is observed in FB devices. Due to tunnel diode embedded beneath the source region, carries in body region is released by quantum tunneling effect, floating body effects and noise overshot phenomenon are suppressed as well as TB device. The results indicate that TDBC device has a comparable LF noise performance as TB device and is suitable for RF application.