• DocumentCode
    3725901
  • Title

    Growth of light-emitting devices based on InGaN quantum dots by MOVPE

  • Author

    Lai Wang;Di Yang;Jiadong Yu;Zhibiao Hao;Yi Luo;Changzheng Sun;Yanjun Han;Bing Xiong;Jian Wang;Hongtao Li

  • Author_Institution
    Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • Volume
    1
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, we reported our recent progresses on growth of InGaN quantum dots and related light-emitting devices by metal organic vapor phase epitaxy.
  • Keywords
    Yttrium
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7375891
  • Filename
    7375891
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3725901