DocumentCode :
3725902
Title :
III-Nitride quantum dot based light emitting diodes for UV emission
Author :
J. Brault;B. Damilano;A. Courville;M. Al Khalfioui;M. Leroux;S. Chenot;P. Vennéguès;P. De Mierry;J. Massies;D. Rosales;T. Bretagnon;B. Gil
Author_Institution :
CNRS-CRHEA, Rue Bernard Gré
Volume :
1
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
AlyGa1-yN-based nanostructures have been fabricated by Molecular Beam Epitaxy and their properties as UV emitters investigated. The structure designs leading to shortest wavelength emission are presented. Quantum dot based LED properties are shown and discussed.
Keywords :
"Gallium nitride","Quantum dots","Temperature measurement","Light emitting diodes","Molecular beam epitaxial growth","Surface morphology","Photoluminescence"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type :
conf
DOI :
10.1109/CLEOPR.2015.7375892
Filename :
7375892
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3725902
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