• DocumentCode
    3725906
  • Title

    Study of percolation transport in the InGaN/AlGaN LEDs with random alloy fluctuation

  • Author

    Yuh-Renn Wu;Chen-Kuo Wu;Chi-Kang Li;David A. Browne;James S. Speck

  • Author_Institution
    Graduate Institute of Photonics and optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, 10617
  • Volume
    1
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    3D Numerical modeling for carrier transport in the EBL and InGaN quantum well by considering the random alloy fluctuation have been done. The result shows that percolative transport should be the dominant transport mechanism in the light emitting diode and affects the efficiency droop.
  • Keywords
    "Fluctuations","Indium","Light emitting diodes","Current density","Solid modeling","Three-dimensional displays"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7375896
  • Filename
    7375896
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3725906