DocumentCode :
3725906
Title :
Study of percolation transport in the InGaN/AlGaN LEDs with random alloy fluctuation
Author :
Yuh-Renn Wu;Chen-Kuo Wu;Chi-Kang Li;David A. Browne;James S. Speck
Author_Institution :
Graduate Institute of Photonics and optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, 10617
Volume :
1
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
3D Numerical modeling for carrier transport in the EBL and InGaN quantum well by considering the random alloy fluctuation have been done. The result shows that percolative transport should be the dominant transport mechanism in the light emitting diode and affects the efficiency droop.
Keywords :
"Fluctuations","Indium","Light emitting diodes","Current density","Solid modeling","Three-dimensional displays"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type :
conf
DOI :
10.1109/CLEOPR.2015.7375896
Filename :
7375896
Link To Document :
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