DocumentCode :
3725933
Title :
GeSn optical gain media towards monolithic 3D photonic integration
Author :
Jifeng Liu;Haofeng Li;Xiaoxin Wang
Author_Institution :
Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA
Volume :
1
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
We present pseudo-single-crystal, direct band gap GeSn gain media fabricated at <;450 °C on dielectric layers towards monolithic 3D photonic integration. A high transient optical gain ~5000 cm-1 has been at λ=2100-2200 nm at 300K.
Keywords :
"Photonics","Photonic band gap","Tensile strain","Strips","Optical device fabrication","Silicon","Media"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type :
conf
DOI :
10.1109/CLEOPR.2015.7375924
Filename :
7375924
Link To Document :
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