• DocumentCode
    3725935
  • Title

    Characteristics of film InP layer and Si substrate bonded interface bonded by wafer direct bonding

  • Author

    Keiichi Matsumoto;Yoshinori Kanaya;Junya Kishikawa;Kazuhiko Shimomura

  • Author_Institution
    Department of Engineering and Applied Sciences, Sophia University, Chiyoda, Tokyo 102-8554, Japan
  • Volume
    1
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrated bonding of thin film InP and Si using wafer direct bonding technique and compared with bulk InP/Si bonded sample in terms of bonding strength and defect formation. Electrical conduction through the interface was also investigated.
  • Keywords
    "Indium phosphide","III-V semiconductor materials","Silicon","Bonding","Substrates","Heating","Force"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7375926
  • Filename
    7375926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3725935