DocumentCode :
3725936
Title :
Enhanced photoluminescence from n+-Ge epitaxial layers on Si: Effect of growth/annealing temperature
Author :
Naoki Higashitarumizu;Kazumi Wada;Yasuhiko Ishikawa
Author_Institution :
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan
Volume :
1
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
Photoluminescence intensity is studied for n-type Ge layers (~1×1019 cm-3) grown on Si. The growth and post-growth annealing temperatures are important factors to enhance the light emission together with the concentration of n-type doping.
Keywords :
"Annealing","Silicon","Temperature measurement","Doping","Furnaces","Photonics","Density measurement"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type :
conf
DOI :
10.1109/CLEOPR.2015.7375927
Filename :
7375927
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3725936
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