• DocumentCode
    3725937
  • Title

    Raman analysis of in-plane biaxial strain for Ge-on-Si lasers

  • Author

    Bugeun Ki;Jiwoong Baek;Chulwon Lee;Yong-Hoon Cho;Jungwoo Oh

  • Author_Institution
    School of Integrated Technology and Yonsei Institute of Convergence Technology, Yonsei University, Incheon, Korea
  • Volume
    1
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Tensile strain of Ge-on-Si with post-growth annealing was analyzed using micro-Raman for optical sources in interconnection system. Tensile Stain in epi-Ge distributed non-linearly with SiGe alloy formation at the interface after annealing.
  • Keywords
    "Tensile strain","Temperature measurement","Annealing","Silicon","Semiconductor device measurement","Photonic band gap"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7375928
  • Filename
    7375928
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3725937