Title :
Drastic enhancement of Eu emission from red light-emitting Eu-doped GaN in a microcavity
Author :
Yasufumi Fujiwara;Tomohiro Inaba;Takanori Kojima;Atsushi Koizumi
Author_Institution :
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Abstract :
Eu-doped GaN (GaN:Eu) has been identified as a promising red emitter. A GaN:Eu layer was confined in a microcavity consisting of a Ag mirror and an AlGaN/GaN distributed Bragg reflector (DBR), resulting in drastic enhancement of Eu emission intensity.
Keywords :
"Light emitting diodes","Microcavities","Distributed Bragg reflectors","Gallium nitride","Ions","Reflectivity"
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
DOI :
10.1109/CLEOPR.2015.7376030
