DocumentCode :
3726040
Title :
Direct growth of thick AlN template on micro-circle patterned-si substrate
Author :
Binh Tinh Tran;Hideki Hirayama;Noritoshi Maeda;Masafumi Jo;Shiro Toyoda
Author_Institution :
Quantum Optodevice Laboratory, Advanced Science Institute, RIKEN, 2-1 Hirosawa, Wako-shi, Saitama 351-0189, Japan
Volume :
2
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
A 8-μm-thick AlN template has been successfully directly grown on micro-circle patterned-Si substrate. Low surface roughness of 3.5 nm and both screw and edge dislocation densities are in the order of 108/cm2 have been obtained.
Keywords :
"Aluminum nitride","III-V semiconductor materials","Substrates","Aluminum gallium nitride","Wide band gap semiconductors","Surface morphology","Rough surfaces"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type :
conf
DOI :
10.1109/CLEOPR.2015.7376032
Filename :
7376032
Link To Document :
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