Title :
Dynamic behavior of 1.3-μm npn-AlGaInAs/InP transistor lasers under collector-base voltage loss-modulation
Author :
Takaaki Kaneko;Takumi Yoshida;Shotaro Tadano;Nobuhiko Nishiyama;Shigehisa Arai
Author_Institution :
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, S9-5, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Abstract :
An intensity modulation of 1.3-μm wavelength npn-AlGaInAs/InP transistor laser was demonstrated by collector-base voltage loss-modulation at 1 GHz. A 150-ps wide pulse operation was observed with the peak intensity enhanced by approximately 6 times the CW intensity level.
Keywords :
"Modulation","Transistors","Cavity resonators","Power generation","Bandwidth","Optical losses","Optical device fabrication"
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
DOI :
10.1109/CLEOPR.2015.7376064
