• DocumentCode
    3726072
  • Title

    Dynamic behavior of 1.3-μm npn-AlGaInAs/InP transistor lasers under collector-base voltage loss-modulation

  • Author

    Takaaki Kaneko;Takumi Yoshida;Shotaro Tadano;Nobuhiko Nishiyama;Shigehisa Arai

  • Author_Institution
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, S9-5, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
  • Volume
    2
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An intensity modulation of 1.3-μm wavelength npn-AlGaInAs/InP transistor laser was demonstrated by collector-base voltage loss-modulation at 1 GHz. A 150-ps wide pulse operation was observed with the peak intensity enhanced by approximately 6 times the CW intensity level.
  • Keywords
    "Modulation","Transistors","Cavity resonators","Power generation","Bandwidth","Optical losses","Optical device fabrication"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7376064
  • Filename
    7376064
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3726072