• DocumentCode
    3726073
  • Title

    Experimental and numerical investigation of slow carrier relaxation in an InGaAs/GaAs quantum dot laser diode

  • Author

    J. M. Lee;B. H. Jun;D. Lee;J. Kim

  • Author_Institution
    Department of Physics, Chungnam National University, Daejeon 305-764, Korea
  • Volume
    2
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Spontaneous emission from InGaAs/GaAs quantum dots was investigated above the lasing threshold through windows structure on a laser diode. We found a clear evidence of slow carrier relaxation from the excited state to the ground state in a lasing condition.
  • Keywords
    "Quantum dot lasers","Spontaneous emission","Diode lasers","Charge carrier density","Stationary state","Semiconductor optical amplifiers"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7376065
  • Filename
    7376065
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3726073