Carrier overflow in InGaN/GaN light-emitting diodes investigated by temperature-dependent short-circuit current characteristics

The temperature dependence of the short-circuit current in the InGaN/GaN multiple-quantum-well light-emitting diode is investigated. From the experiments, we demonstrate that the carrier overflow to the p-GaN clad occurs more severely with decreasing temperature, resembling the behavior of the efficiency droop and the open-circuit voltage.