• DocumentCode
    3726092
  • Title

    Quantitative analysis of carrier escape efficiency in GaN-based light-emitting diodes

  • Author

    Seung-Hyuk Lim;Young-Ho Ko;Yong-Hoon Cho

  • Author_Institution
    Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305-701, Republic of Korea
  • Volume
    2
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Internal quantum efficiency, non-radiative efficiency in the active region, and efficiency of carrier escape out of the active region in InGaN-based light-emitting diode are deduced by comparison between open- and short-circuit photoluminescence experiments.
  • Keywords
    "Light emitting diodes","Yttrium","Density measurement","Photoluminescence","Radiative recombination","Charge carrier processes"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7376084
  • Filename
    7376084
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3726092