Title :
Quantitative analysis of carrier escape efficiency in GaN-based light-emitting diodes
Author :
Seung-Hyuk Lim;Young-Ho Ko;Yong-Hoon Cho
Author_Institution :
Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305-701, Republic of Korea
Abstract :
Internal quantum efficiency, non-radiative efficiency in the active region, and efficiency of carrier escape out of the active region in InGaN-based light-emitting diode are deduced by comparison between open- and short-circuit photoluminescence experiments.
Keywords :
"Light emitting diodes","Yttrium","Density measurement","Photoluminescence","Radiative recombination","Charge carrier processes"
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
DOI :
10.1109/CLEOPR.2015.7376084
