Title :
Optimization of AlN substrate geometry for AlGaN-based deep-ultraviolet light-emitting diodes
Author :
Manabu Taniguchi;Guo-Dong Hao;Kousei Nakaya;Shin-ichiro Inoue
Author_Institution :
Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492, Japan
Abstract :
Light extraction efficiency (LEE) in deep-ultraviolet light emitting diodes with AlN substrate was investigated using Ray Tracing method. The results showed that LEE was dramatically improved by optimizing the sidewalls angle and AlN thickness.
Keywords :
"Aluminum nitride","III-V semiconductor materials","Substrates","Light emitting diodes","Aluminum gallium nitride","Wide band gap semiconductors","Antenna radiation patterns"
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
DOI :
10.1109/CLEOPR.2015.7376090
