• DocumentCode
    3726144
  • Title

    Optimization of Lorentz model parameters for crystalline AS2S3, SiC and modified Lorentz model parameters for nanocrystalline SiO

  • Author

    Mehedi Islam;Md. Nazmul Islam;Monzurul Islam;Md. Ghulam Saber;Rakibul Hasan Sagor

  • Author_Institution
    Department of Electrical &
  • Volume
    2
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have presented the optimized Lorentz model parameters for crystalline arsenic sulfide (AS2S3), silicon carbide (SiC) and modified Lorentz model parameters for nanocrystalline silicon monoxide (SiO) obtained using a large scale non-linear algorithm. The complex relative permittivity calculated using the optimized parameters agree well with the experimental values over broad frequency bands. The associated RMS deviations are 0.254, 0.003, 0.010 and 0.009 respectively.
  • Keywords
    "Silicon carbide","Permittivity","Mathematical model","Finite difference methods","Optimization","Silicon","Time-domain analysis"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7376137
  • Filename
    7376137
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3726144