• DocumentCode
    3726176
  • Title

    Power-loss mechanisms in surface passivated AlGaN/AlN/GaN heterojunctions

  • Author

    E. Tiras;G. Atmaca;S. B. Lisesivdin;S. Ardali;T. Malin;V. Mansurov;K. Zhuravlev

  • Author_Institution
    Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, Eskisehir 26470, Turkey
  • Volume
    2
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The surface passivation effect on the power-loss mechanisms in AlGaN/AlN/GaN heterostructures was investigated. The electron temperatures of hot electrons was obtained from the temperature and the applied electric field dependencies of the Hall mobility.
  • Keywords
    "Temperature measurement","Temperature dependence","Electric fields","HEMTs","MODFETs","Hall effect","Gallium nitride"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7376169
  • Filename
    7376169
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3726176