• DocumentCode
    3726178
  • Title

    Analysis of the characteristics with increasing the number of QWs for near-ultraviolet LEDs

  • Author

    Hyo-Shik Choi;Jong-In Shim

  • Author_Institution
    Department of Electronics and Communication Engineering, Hanyang University, Ansan Gyeonggi-do 426-791, Korea
  • Volume
    2
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper reports the analysis of the near-ultraviolet light-emitting-diodes (NUV LEDs) characteristics with increasing the number of QWs from 5 to 7 by same growth process. By means of optical, electrical characterization and carrier rate equation analysis, we show that the NUV LEDs performances were improved with increasing the number of QWs by decreasing the non-radiative recombination rate.
  • Keywords
    "Light emitting diodes","Radiative recombination","Yttrium","Gallium nitride","Substrates","Power generation","Optical buffering"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7376171
  • Filename
    7376171
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3726178