DocumentCode :
3726201
Title :
Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED
Author :
Motoaki Iwaya;Daisuke Iida;Kunihiro Takeda;Toru Sugiyama;Tetsuya Takeuchi;Satoshi Kamiyama;Isamu Akasaki
Author_Institution :
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
Volume :
4
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
We discovered that Si-doped AlGaN with low AlN molar fraction have been used to realize an external low-resistivity n-layer at room temperature. This Si-doped n-Al0.05Ga0.95N underlying layer is extremely useful for the realization of high-performance nitride-based light emitting diodes. We also confirmed a reduction in the differential resistance of a violet light-emitting diode by using this n-AlGaN.
Keywords :
"Aluminum gallium nitride","Wide band gap semiconductors","Gallium nitride","Light emitting diodes","Silicon","Resistance","Surface morphology"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type :
conf
DOI :
10.1109/CLEOPR.2015.7376314
Filename :
7376314
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3726201
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