• DocumentCode
    3726201
  • Title

    Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED

  • Author

    Motoaki Iwaya;Daisuke Iida;Kunihiro Takeda;Toru Sugiyama;Tetsuya Takeuchi;Satoshi Kamiyama;Isamu Akasaki

  • Author_Institution
    Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
  • Volume
    4
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We discovered that Si-doped AlGaN with low AlN molar fraction have been used to realize an external low-resistivity n-layer at room temperature. This Si-doped n-Al0.05Ga0.95N underlying layer is extremely useful for the realization of high-performance nitride-based light emitting diodes. We also confirmed a reduction in the differential resistance of a violet light-emitting diode by using this n-AlGaN.
  • Keywords
    "Aluminum gallium nitride","Wide band gap semiconductors","Gallium nitride","Light emitting diodes","Silicon","Resistance","Surface morphology"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7376314
  • Filename
    7376314
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3726201