DocumentCode :
3726202
Title :
Enhanced light extraction efficiency of AlGaN-based deep-ultraviolet light-emitting diodes by utilizing strong sidewall emission
Author :
Jong Won Lee;Jun Hyuk Park;Dong Yeong Kim;Jungsub Kim;E. Fred Schubert;Jong Kyu Kim
Author_Institution :
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea
Volume :
4
fYear :
2015
Firstpage :
1
Lastpage :
3
Abstract :
We demonstrate new design of Deep-UV LEDs extracting strong sidewall-emission redirect top direction. We observe considerably enhanced optical and improved electrical properties and expect this model can provide key idea in current DUV LEDs for enhancing light extraction efficiency.
Keywords :
"Aluminum gallium nitride","Wide band gap semiconductors","Light emitting diodes","Optical device fabrication","Optical reflection","Yttrium","Optical polarization"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type :
conf
DOI :
10.1109/CLEOPR.2015.7376315
Filename :
7376315
Link To Document :
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