DocumentCode
3726202
Title
Enhanced light extraction efficiency of AlGaN-based deep-ultraviolet light-emitting diodes by utilizing strong sidewall emission
Author
Jong Won Lee;Jun Hyuk Park;Dong Yeong Kim;Jungsub Kim;E. Fred Schubert;Jong Kyu Kim
Author_Institution
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea
Volume
4
fYear
2015
Firstpage
1
Lastpage
3
Abstract
We demonstrate new design of Deep-UV LEDs extracting strong sidewall-emission redirect top direction. We observe considerably enhanced optical and improved electrical properties and expect this model can provide key idea in current DUV LEDs for enhancing light extraction efficiency.
Keywords
"Aluminum gallium nitride","Wide band gap semiconductors","Light emitting diodes","Optical device fabrication","Optical reflection","Yttrium","Optical polarization"
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type
conf
DOI
10.1109/CLEOPR.2015.7376315
Filename
7376315
Link To Document