DocumentCode :
3726203
Title :
Optimization of p-electrode pattern for AlGaN-based deep-ultraviolet light-emitting diodes
Author :
Guo-Dong Hao;Manabu Taniguchi;Kousei Nakaya;Shin-ichiro Inoue
Author_Institution :
Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe 651-2492, Japan
Volume :
4
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
We studied on various p-electrode patterns to solve current crowding problem in AlGaN-based deep-ultraviolet light-emitting diode. Simulation results of optimized p-electrode pattern showed a uniform current density distribution and improved performance of light output power.
Keywords :
"Light emitting diodes","Current density","Power generation","Aluminum gallium nitride","Wide band gap semiconductors","Electrodes","Radiative recombination"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type :
conf
DOI :
10.1109/CLEOPR.2015.7376316
Filename :
7376316
Link To Document :
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