Title :
Improvement of modulation speed in Si slow light modulator by optimizing doping profile
Author :
Moe Takeuchi;Yosuke Terada;Toshihiko Baba
Author_Institution :
Department of Electrical and Computer Engineering, Yokohama National University 79-5 Tokiwadai, Hodogayaku, Yokohama 240-8501, Japan
Abstract :
We theoretically investigated the modulation speed of Si photonic crystal slow light modulators. Optimizing the doping profile of p/n junction reduces the RC time constant and enhances the speed to 40 Gbps.
Keywords :
"Junctions","Modulation","Silicon","Absorption","Lattices","Photonics","Slow light"
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
DOI :
10.1109/CLEOPR.2015.7376333
