Title :
A sub-microwatt threshold Raman silicon laser using a high-Q nanocavity
Author :
Daiki Yamashita;Yasushi Takahashi;Takashi Asano;Susumu Noda
Author_Institution :
Department of Physics and Electronics, Osaka Prefecture University, Sakai, Osaka 599-85 70, Japan
Abstract :
We develop a nanocavity Raman Si laser with a sub-microwatt threshold of 0.52 μW by accurately matching a frequency spacing of the two nanocavity modes to the Raman shift of Si nanocavity.
Keywords :
"Silicon","Yttrium","Stimulated emission","Laser excitation","Power generation","Raman scattering","Photonics"
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
DOI :
10.1109/CLEOPR.2015.7376370
