• DocumentCode
    3726434
  • Title

    Cavity length dependence on lasing characteristics of double-capped QDs laser

  • Author

    T. Sukigara;Y. Yamamoto;T. Nishiyama;K. Shimomura

  • Author_Institution
    Dept. of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
  • Volume
    3
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Cavity length dependence on lasing characteristics was obtained in the p-modulation doped double-capped InAs QDs laser on the InP substrate at 1.65μm wavelength. Stranski-Krastanov InAs QDs was grown low-pressure MOVPE, and employed the p-modulation doping in the capping layer during the double-capped process. Lasing characteristics was obtained under pulsed injection current at room temperature. We have shown the lasing wavelength and threshold current dependent on the cavity length of the laser.
  • Keywords
    "Lasers","Cavity resonators","Threshold current","Indium phosphide","III-V semiconductor materials","Epitaxial growth","Epitaxial layers"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7376555
  • Filename
    7376555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3726434