• DocumentCode
    3727359
  • Title

    An optimum inductive matched cascode LNA in 60GHz-band

  • Author

    Hiroyuki Mizutani;Eiji Taniguchi;Masaomi Tsuru;Ryuji Inagaki;Suguru Kameda;Noriharu Suematsu;Tadashi Takagi;Kazuo Tsubouchi

  • Author_Institution
    Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Japan
  • fYear
    2015
  • Firstpage
    28
  • Lastpage
    30
  • Abstract
    This paper presents an optimum interstage matching inductor of a cascode amplifier by formulation, for the first time. The formulation clarifies capacitances of FETs which degrade a gain of the cascode amplifier. The inductive matched cascode LNA fabricated by 90nm CMOS performs 25.6 dB gain with NF of 6 dB and output P1dB of -2.3 dBm at 60GHz while consuming 26.9 mW.
  • Keywords
    "Field effect transistors","Gain","Admittance","CMOS integrated circuits","Noise measurement","Yttrium","Inductors"
  • Publisher
    ieee
  • Conference_Titel
    Radio-Frequency Integration Technology (RFIT), 2015 IEEE International Symposium on
  • Type

    conf

  • DOI
    10.1109/RFIT.2015.7377876
  • Filename
    7377876
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3727359