Linearization of RF CMOS power amplifiers

This paper presents two kinds of linearization techniques for RF CMOS Power Amplifiers (PAs). One is the linearization technique using adaptively controlled biases of Common Source (CS) and Common Gate (CG) amplifier in a cascode structure The ethers are the power-cell linearization techniques such as large signal multi-gated transistor (LS-MGTR) of a CS amplifier and adaptive power cell (APC) of CG amplifier.