DocumentCode
3727400
Title
Linearization of RF CMOS power amplifiers
Author
Gwanghyeon Jeong;Bonhoon Koo;Taehwan Joo;Songcheol Hong
Author_Institution
KAIST, Daejeon, 305-701, Korea
fYear
2015
Firstpage
154
Lastpage
156
Abstract
This paper presents two kinds of linearization techniques for RF CMOS Power Amplifiers (PAs). One is the linearization technique using adaptively controlled biases of Common Source (CS) and Common Gate (CG) amplifier in a cascode structure The ethers are the power-cell linearization techniques such as large signal multi-gated transistor (LS-MGTR) of a CS amplifier and adaptive power cell (APC) of CG amplifier.
Publisher
ieee
Conference_Titel
Radio-Frequency Integration Technology (RFIT), 2015 IEEE International Symposium on
Type
conf
DOI
10.1109/RFIT.2015.7377918
Filename
7377918
Link To Document