DocumentCode :
3727681
Title :
Insights to memristive memory cell from a reliability perspective
Author :
Peyman Pouyan;Esteve Amat;Antonio Rubio
Author_Institution :
Dept. of Electronic Engineering UPC Barcelona Tech, Barcelona Spain
fYear :
2015
fDate :
11/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
2
Abstract :
The scaling roadmap of devices under a “more than Moore” scenario is resulting in the emergence of new types of devices. Among them, memristors seem to be promising candidates to be suitable for various areas of application such as in memories and neuromorphic computing chips. However, memristive devices still face some challenges to be resolved before becoming a mainstream. This work analyzes the impact of two of the main reliability concerns in the design of memristive memories: variability and degradation, and proposes circuit solution to enhance their reliability.
Keywords :
"Memristors","Resistance","Reliability engineering","Integrated circuit reliability","Magnetoelectronics","Degradation"
Publisher :
ieee
Conference_Titel :
Memristive Systems (MEMRISYS) 2015 International Conference on
Type :
conf
DOI :
10.1109/MEMRISYS.2015.7378382
Filename :
7378382
Link To Document :
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