Resistance switching in SiOx

Resistive RAM (RRAM) are of great interest to the silicon microelectronics industry, offering the possibility of low programming energy per bit, rapid switching, and very high levels of integration. Moreover a great effort has been devoted to exploring the potential of RRAM in neuromorphic applications. Here we present the study of silicon-rich silica films to establish the switching properties, chemical and structural changes during the resistance switching. We present electrical measurements and we discuss on structural changes using the atomic force microscopy (AFM) and conductive atomic force microscopy (CAFM). Further we use AFM to perform tomography studies of filaments. We report the emission of molecular oxygen during the resistance switching.