DocumentCode
3728013
Title
Gunn diodes for 26-40 GHz
Author
J. Parafianowicz;J. Klamka;K. Reginski;M. Gorska;H. Wrzesinska;A. Uszynski
Author_Institution
Inst. of Electron Technol., Warsaw, Poland
fYear
1998
Firstpage
89
Abstract
The technology of GaAs MBE layers for K-band Gunn diodes is described in the paper along with the method of diode structure preparation. Chips were assembled directly in a microwave generator. The design of measurement circuit and microwave generator, as well as results of experiments are presented.
Keywords
"Gunn devices","Diodes","Microwave generation","Paper technology","Gallium arsenide","K-band","Assembly","Microwave measurements","Semiconductor device measurement","Microwave circuits"
Publisher
ieee
Conference_Titel
Microwaves and Radar, 1998. MIKON ´98., 12th International Conference on
Print_ISBN
83-906662-0-0
Type
conf
DOI
10.1109/MIKON.1998.737925
Filename
737925
Link To Document