• DocumentCode
    3733776
  • Title

    Comparison of silicon carbide MOSFET and IGBT based electric vehicle traction inverters

  • Author

    Sadik Ozdemir;Fatih Acar;Ugur S. Selamogullari

  • Author_Institution
    Department of Electrical Engineering Yildiz Technical University Istanbul, Turkey
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper compares Silicon Carbide (SiC) MOSFET and IGBT based electric vehicle (EV) traction inverters by considering the cost and efficiency of these two inverters. Commercially available SiC MOSFET CCS50M12CM2 (1200V / 50A) from Cree and IGBT PM50RL1A120 (1200V / 50A) from Powerex are modeled in detail in PSIM to obtain efficiency curves of inverters under different load conditions. The gained efficiency curves are evaluated using a kinematic model of an EV under three different drive cycles to compare the performance of these two inverters in terms of energy efficiency. Finally, initial cost and operation costs of these two inverters are analyzed.
  • Keywords
    "Inverters","Silicon carbide","MOSFET","Insulated gate bipolar transistors","Load modeling","Semiconductor device modeling","Vehicles"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering and Informatics (ICEEI), 2015 International Conference on
  • Print_ISBN
    978-1-4673-6778-3
  • Electronic_ISBN
    2155-6830
  • Type

    conf

  • DOI
    10.1109/ICEEI.2015.7387215
  • Filename
    7387215