A 5.2-GHz full-integrated RF front-end by T/R switch, LNA, and PA co-design with 3.2-dB NF and +25.9-dBm output power

A 5.2-GHz fully-integrated RF front-end combining the design of a T/R switch, an LNA, and a PA is presented for single-chip solution on CMOS. Based on the concept of circuit co-design, components are properly reused in order to minimize signal losses and chip area. The proposed RF front-end requires no off-chip components while demonstrates an NF of 3.2 dB in the receive mode, and a saturated output power of +25.9 dBm in the transmit mode by using a standard 90-nm CMOS process.