Title :
Optimization of structural and technological parameters of the field effect Hall sensor
Author :
V. Volchek;I. Lovshenko;V. Stempitsky;Dao Dinh Ha;A. Belous;V. Saladukha
Author_Institution :
Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
Abstract :
The results of optimization of magnetically sensitive element Field Hall sensor based on the MIS structure formed on a "silicon-on-insulator" (SOI LSF) parameters was presented. Main characteristics of device structure were defined using the results of Silvaco software simulation.
Keywords :
"Sensitivity","Silicon","Temperature dependence","Magnetic fields","Gallium arsenide","Logic gates","Temperature sensors"
Conference_Titel :
Advanced Technologies for Communications (ATC), 2015 International Conference on
Print_ISBN :
978-1-4673-8372-1
DOI :
10.1109/ATC.2015.7388410
