• DocumentCode
    3734537
  • Title

    Optimization of structural and technological parameters of the field effect Hall sensor

  • Author

    V. Volchek;I. Lovshenko;V. Stempitsky;Dao Dinh Ha;A. Belous;V. Saladukha

  • Author_Institution
    Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
  • fYear
    2015
  • Firstpage
    642
  • Lastpage
    644
  • Abstract
    The results of optimization of magnetically sensitive element Field Hall sensor based on the MIS structure formed on a "silicon-on-insulator" (SOI LSF) parameters was presented. Main characteristics of device structure were defined using the results of Silvaco software simulation.
  • Keywords
    "Sensitivity","Silicon","Temperature dependence","Magnetic fields","Gallium arsenide","Logic gates","Temperature sensors"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Technologies for Communications (ATC), 2015 International Conference on
  • ISSN
    2162-1020
  • Print_ISBN
    978-1-4673-8372-1
  • Type

    conf

  • DOI
    10.1109/ATC.2015.7388410
  • Filename
    7388410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3734537