Title :
Design of a high efficiency GaN-HEMT RF power amplifier
Author :
Nagavenkat K. Gaddam;Jos? Machado da Silva
Author_Institution :
INESC TEC, Porto, Portugal
Abstract :
This paper presents the design and implementation of a GaN-HEMT, class-J power amplifier suitable for cognitive radio transceivers, i. e., which presents high-efficiency and wideband characteristics, being these maintained for large load variations. Simulation results are presented which show large-signal measurement results of 30 dB gain with 60%-76% power-added efficiency (PAE) over a band of 1.3-2.3 GHz. Adaptivity to load changes is being developed to ensure PAE above 70% for large load variations.
Keywords :
"Radio frequency","Bandwidth","Uncertainty"
Conference_Titel :
Design of Circuits and Integrated Systems (DCIS), 2015 Conference on
DOI :
10.1109/DCIS.2015.7388610
