• DocumentCode
    3734615
  • Title

    Design of a high efficiency GaN-HEMT RF power amplifier

  • Author

    Nagavenkat K. Gaddam;Jos? Machado da Silva

  • Author_Institution
    INESC TEC, Porto, Portugal
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    This paper presents the design and implementation of a GaN-HEMT, class-J power amplifier suitable for cognitive radio transceivers, i. e., which presents high-efficiency and wideband characteristics, being these maintained for large load variations. Simulation results are presented which show large-signal measurement results of 30 dB gain with 60%-76% power-added efficiency (PAE) over a band of 1.3-2.3 GHz. Adaptivity to load changes is being developed to ensure PAE above 70% for large load variations.
  • Keywords
    "Radio frequency","Bandwidth","Uncertainty"
  • Publisher
    ieee
  • Conference_Titel
    Design of Circuits and Integrated Systems (DCIS), 2015 Conference on
  • Type

    conf

  • DOI
    10.1109/DCIS.2015.7388610
  • Filename
    7388610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3734615