DocumentCode
3734689
Title
High-performance of asymmetric FET-based plasmonic THz detector with vertically-integrated antenna in 65-nm CMOS technology
Author
Min Woo Ryu; Jeong Seop Lee; Kwan Sung Kim; Jong-Ryul Yang; Seong-Tae Han; Kyung Rok Kim
Author_Institution
School of electrical and computer engineering, Ulsan National Institute of Science and Technology, Republic of Korea
fYear
2015
fDate
7/1/2015 12:00:00 AM
Firstpage
59
Lastpage
62
Abstract
In this paper, we report the high-performance plasmonic terahertz (THz) detector based on antenna-coupled asymmetric nano-CMOS structure. For maximizing performance enhancement by nano-CMOS technology, asymmetric MOSFET is newly designed on a self-aligned gate structure and vertically-integrated patch antenna in 65-nm CMOS technology. Finally, we obtained the highly enhanced detection performance with responsivity (Rv) of 1.5 kV/W and noise-equivalent-power (NEP) of 15 pW/Hz05 at 0.2 THz.
Keywords
"Conferences","Nanotechnology","5G mobile communication"
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
Type
conf
DOI
10.1109/NANO.2015.7388686
Filename
7388686
Link To Document