• DocumentCode
    3734722
  • Title

    Physics of electronic transport in low-dimensionality materials for future FETs

  • Author

    Massimo V. Fischetti;William G. Vandenberghe;Ana Suarez Negreira;Zhun-Yong Ong; Bo Fu

  • Author_Institution
    Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, USA
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    759
  • Lastpage
    761
  • Abstract
    We discuss why low-dimensionality materials are needed to scale logic devices to the 5 nm gate-length. We discuss the advantages and disadvantages of graphene and graphene nanoribbons, the feasibility of Bose-Einstein condensation in bilayer graphene, and the use of 2D topological insulators, such as halogen-functionalized monolayer tin.
  • Keywords
    "Graphene","Logic gates","Insulators","Scattering","Tunneling","Leakage currents","Field effect transistors"
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
  • Type

    conf

  • DOI
    10.1109/NANO.2015.7388720
  • Filename
    7388720
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3734722