Title :
Physics of electronic transport in low-dimensionality materials for future FETs
Author :
Massimo V. Fischetti;William G. Vandenberghe;Ana Suarez Negreira;Zhun-Yong Ong; Bo Fu
Author_Institution :
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, USA
fDate :
7/1/2015 12:00:00 AM
Abstract :
We discuss why low-dimensionality materials are needed to scale logic devices to the 5 nm gate-length. We discuss the advantages and disadvantages of graphene and graphene nanoribbons, the feasibility of Bose-Einstein condensation in bilayer graphene, and the use of 2D topological insulators, such as halogen-functionalized monolayer tin.
Keywords :
"Graphene","Logic gates","Insulators","Scattering","Tunneling","Leakage currents","Field effect transistors"
Conference_Titel :
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
DOI :
10.1109/NANO.2015.7388720
