• DocumentCode
    3734729
  • Title

    Combining high-resolution X-ray reciprocal space mapping and dark-field electron holography for strain analysis in 20 nm pMOS structures

  • Author

    Aur?le Durand;Victor Boureau;Delphine Lecunff;Axel Hourtane;Daniel Benoit;Alain Claverie;Martin Hytch;Denis Rouchon;Patrice Gergaud

  • Author_Institution
    STMicroelectronics, 850 rue Jean Monnet, F-38926 Crolles, France
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    785
  • Lastpage
    788
  • Abstract
    In this paper we explore the benefit of combining High Resolution X-Ray Reciprocal Space Mapping (HR-RSM) and Dark-Field Electron Holography (DFEH) techniques for strain characterization of thin pMOS-like structures. We are able to simulate the measured HR-RSM from the displacement field extracted by DFEH. This is a first step developing High Resolution X-Ray Diffraction (HRXRD) as a viable technique for in-line strain metrology.
  • Keywords
    "Strain","Silicon germanium","Silicon","Substrates","Satellites","Position measurement","Strain measurement"
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
  • Type

    conf

  • DOI
    10.1109/NANO.2015.7388727
  • Filename
    7388727
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3734729