• DocumentCode
    3734737
  • Title

    Atomistic simulation of GaAs/AlGaAs quantum dot/ring nanostructures

  • Author

    W. Rodrigues;M. Auf der Maur;A. Di Carlo;A. Pecchia;D. Barettin;S. Sanguinetti

  • Author_Institution
    Dept. of Electronic Engineering, Universit? degli Studi di Roma Tor Vergata, Rome, Italy
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    809
  • Lastpage
    812
  • Abstract
    We report on numerical simulations of GaAs/Al0.3Ga0.7As complex quantum dot/ring nanostructure. Both the empirical tight-binding (ETB) model with a sp3d5s*+spin-orbit parametrization and k.p model are used to study the electronic properties of the complex quantum system. Graphical processing units (GPUs) are employed to carry out the ETB calculation within a reasonable time frame for systems with varying quantum dot size. The goal of our investigation is to fine tune the electronic properties of the complex nanostructure via size tuning, in order to find lambda states (coupled states) that are localized in both the quantum dot and quantum ring.
  • Keywords
    "Quantum dots","Nanostructures","Numerical models","Graphics processing units","Electric potential","Computational modeling","Atom optics"
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
  • Type

    conf

  • DOI
    10.1109/NANO.2015.7388735
  • Filename
    7388735
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3734737