A carrier-based analytic theory for electrical simulation of negative capacitance surrounding gate ferroelectric capacitor

A carrier-based electrostatic potential model was proposed for electrical simulation of negative capacitance (NC) surrounding gate ferroelectric capacitor with one-dimensional (1-D) Landau-Khalatnikov equation. Surface potential, total mobile charge per unit area, total gate capacitance and negative capacitance effect (characterized by the gain of surface potential) versus gate voltage were studied extensively by changing different device parameters. These parameters include the ferroelectric film thickness, channel radius and the insulator layer thickness. The calculated results obtained from the proposed model are beneficial to investigate the operating mechanisms of the NC surrounding gate ferroelectric transistors and to optimize their device performance.