DocumentCode :
3734769
Title :
Electrical simulator for devices based on quantum dot arrays
Author :
S. Illera;J. D. Prades;A. Cirera
Author_Institution :
MIND/IN2UB Departament d´Electr?nica, Universitat de Barcelona, C/Mart? i Franqu?s 1, E-08028, Spain
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
924
Lastpage :
927
Abstract :
We present an electron transport simulator to describe the electronic transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. It is based on the non-coherent rate equations and the local potential are computed within the self-consistent field regime. The method underlying the electrical transport model depends only on fundamental material parameters and the geometrical description of the system creating a simulator tool capable to describe realistic devices based on quantum dots. Two specific prototypical devices, an arbitrary array of QDs embedded in a matrix insulator and a transistor device based on QDs, are used to illustrate the kind of unique insight these numerical simulations can provide.
Keywords :
"Quantum dots","Silicon","Energy states","Electric potential","Mathematical model","Electrodes","Transistors"
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
Type :
conf
DOI :
10.1109/NANO.2015.7388767
Filename :
7388767
Link To Document :
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