• DocumentCode
    3734866
  • Title

    Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process

  • Author

    Yi-Chun Lee;Akio Higo; Chang Yong Lee;Cedric Thomas;Tomoyuki Tanikawa;Kanako Shojiki;Shigeyuki Kuboya;Ryuji Katayama;Takayuki Kiba; Peichen Yu;Ichiro Yamashita;Akihiro Murayama;Seiji Samukawa

  • Author_Institution
    Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 TA Hsueh Road, Hsinchu 30010, Taiwan
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    1278
  • Lastpage
    1281
  • Abstract
    Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 × 1011 cm-2 with 6-nm in diameter and 15-nm-high nanopillars.
  • Keywords
    "Etching","Light emitting diodes","Scanning electron microscopy","Fabrication","Nanostructures","Iron"
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
  • Type

    conf

  • DOI
    10.1109/NANO.2015.7388865
  • Filename
    7388865
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3734866