Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET

Future wearable electronics require not only flexibility but also preservation of the perks associated with today´s high-performance, traditional silicon electronics. In this work we demonstrate a state-of-the-art fin-shaped field-effect transistor (FinFET)-based, out-of-plane strain sensor on flexible silicon through transforming the bulk device in a transfer-less process. The device preserves the functionality and high performance associated with its bulk, inflexible state. Furthermore, gate leakage current shows sufficient dependence on the value of the applied out-of-plane strain that enables permits use of the flexible device as a switching device as well as a strain sensor.