Multiscale approach for the study of optoelectronic properties of InGaN/GaN nanowire light-emitting diodes

In this work we present a study of electronic and optoelectronic properties of InGaN/GaN nanowire (NW) light-emitting diodes (LEDs) with a multiscale parametric approach. InGaN alloy bandgap bowing parameters extracted from empirical tight-binding (ETB) calculations are used in continuous level 3D simulation models. Strain and transport calculations are performed and quantum k·p-based models yield transition energies. Calculated emission energies are compared with experimental data showing a qualitative agreement within the experimental uncertainties.